Effect of stress on the temperature coefficient of solder-free mounted laser diode bars
Carles Oriach-Font (a), Eduard Carbonell-Sanromà (a), Gemma Safont-Camprubí (a), Sandra Tricas-Mendoza (a), Clàudia Garcia-Cubero (a)
(a) Monocrom S.L., c/ Vilanoveta 6, Vilanova i la Geltrú, Barcelona, Spain 08800
Presented at
SPIE LASE, Presented live 25 January 2022, San Francisco, California, United States
https://doi.org/10.1117/12.2608795
Abstract
Variation of lasing wavelength with temperature is a key factor to determine packaging thermal resistance in laser diodes. Using proprietary mounting technology that clamps laser bars instead of using soldering material we can precisely control the stress applied on the laser bars. We experimentally demonstrate that uniaxial stress in the normal direction of the p-n junction (which results in tensile stress in the lattice) increases the temperature characteristic of laser diodes. We report a temperature characteristic raise between 10% and 50% under different stress conditions.
References
[1] G. Viera, M. Galán, A. Isern, O. Zsolochevsca, A. Leyva and T. Etzkorn, “New features from non-soldered clamp-mounted diode laser bars,” in Conference on Lasers and Electro-Optics Europe, Munich, 2005.
[2] F. M. Ryan and R. C. Miller, “The effect of uniaxial strain on the threshold currend and output of GaAs lasers,” Applied Physics Letters, vol. 3, p. 162, 1963.
[3] C. S. Adams and D. T. Cassidy, “Effects of stress on threshold, wavelength, and polarization of the output of InGaAsP semiconductor diode lasers,” Journal of Applied Physics, no. 64, p. 6631, 1988.
[4] J. LeChlecH, D. T. Cassidy, M. Biet, F. Laruelle, M. Bettiati and J.-P. Landesman, “GaAs-Based Laser Diode Bonding-Induced Stress Investigation by Means of Simulation and Degtree of Polarization of Photoluminiscence Measurements,” in 2010 11th International Thermal, Mechanical & Multi-Physics Simulation, and Experiments in Microelectronics and Microsystems (EuroSimE), 2010.
[5] H. Zhang, T. Fu, C.-E. Zah and X. Liu, “Easy method to measure the packaging-induced,” Applied Optics, vol. 58, no. 24, pp. 6672-6677, 2019.
[6] W. Trzeciakowski, A. Bercha, F. Dybala, R. Bohdan, P. Adamiec and O. Mariani, “Pressure and temperature tuing of laser diodes,” Physica status solidi (b), vol. 244, no. 1, pp. 179-186, 2007.
[7] E. V. Bogdanov, K. I. Kolokolov, N. V. Melnikova, N. Ya Minina and G. V. Tikhomirova, “Polarization mode switching in p-AlGaAs/GaAsP/n-AlGaAs diodes in presence of compressive stress,” Journal of Physics: Conference Series, vol. 950, no. 042047, pp. 1-6, 2017.
[8] E. V. Bogdanov, N. Y. Minina, J. W. Tomm and H. Kissel, “Effect of uniaxial stress on electroluminiscence, valence band modification, optical gain, and polarization modes in tensile strained p-AlGaAs/GaAsP/n-AlGaAs laser diode structures: Numerical calculations and experimental results,” Journal of applied physics, vol. 112, no. 093113, pp. 1-10, 2012.
[9] D. T. Cassidy, O. Rehioui, C. K. Hall, L. Béchou, Y. Deshayes, A. Kohl, T. Fillardet and Y. Ousten, “High-power diode laser bars and shear strain,” Optics letters, vol. 38, no. 10, pp. 1633-1635, 2013.
[10] S. Vlasova, A. Vlasov, K. Alloyarov and T. Volkova, “Investigation of temperature dependence of radiation from semiconductor lasers and light emitting diodes,” in IOP Conf. Series: Earth and Environmental Science 539 012137, Saint-Petersburg, 2020.
[11] J. W. Tomm, F. Weik, A. Gerhardt, T. QuocTran, J. Biesenbach, H. Müntz and G. Seibold, “Transient thermal tuning properties of single emitters in actively cooled high-power cm-bar arrays,” Proceedings of the SPIE, vol. 5336, pp. 125-131, 200