Laser parameters | 808 nm | 915 nm | 940 nm | 1060 nm |
---|---|---|---|---|
Type | actively cooled stack | actively cooled stack | actively cooled stack | actively cooled stack |
Wavelength(1) [nm] | 780 – 830 | 910 – 920 | 930 – 950 | 1040 – 1080 |
Wavelength tolerance [nm] | ±20 | ±20 | ±20 | ±20 |
Spectral width [nm] | 3 | 3 | 3 | 3 |
Wavelength shift [nm/K] | 0.27 | 0.27 | 0.27 | 0.27 |
Output power(2,3) [W] | CW – up to 100 / QCW – up to 500 | CW – up to 200 / QCW – up to 200 | CW – up to 120 / QCW – up to 300 | CW – up to 100 / QCW – up to 250 |
Operating current [A] | CW < 120 / QCW < 480 | CW < 220 / QCW <220 | CW < 120 / QCW <320 | CW < 120 / QCW < 280 |
Efficiency coefficient [W/A] | 1.2 | 1.2 | 1.2 | 1.2 |
Voltage @ connectors(4) [V] | 2 – 30 | 2 – 30 | 2 – 30 | 2 – 30 |
Bar to bar pitch [mm] | down to 0.4 | down to 0.4 | down to 0.4 | down to 0.4 |
Optics (optional) | FAC / SAC / BT | FAC / SAC / BT | FAC / SAC / BT | FAC / SAC / BT |
Bars per stack(5) | 1 – 15 | 1 – 15 | 1 – 15 | 1 – 15 |
Smile [μm] | < 0.3 | < 0.3 | < 0.3 | < 0.3 |
1. Other wavelengths on request.
2. Specification are subjected to chips availability.
3. Expected output power per laser bar. Can varies based on current and temperature.
4. Voltage from the power supply must be higher, as due to high current there will be a voltage drop in the cables.
5. Pitch dependent
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MICRO-OPTICS
MICRO-OPTICS
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ELECTRONIC COMPONENTS
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